TEWORDT, M , MARTINMORENO, L , NICHOLLS, J T , PEPPER, M , KELLY, M J , LAW, V J , RITCHIE, D A , FROST, J E F and JONES, G A C (1992) Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes. Physical Review B, 45 (24).
Full text access: Open
Resonant tunneling is studied in an ultrasmall asymmetric GaAs-AlxGa1-xAs double-barrier diode at low temperatures. In reverse bias, spikelike current-voltage characteristics are observed and assigned to electrons tunneling from zero-dimensional (OD) states in the accumulation layer to OD states in the well. The OD-OD tunneling reflects the single-electron spectrum without Coulomb charging effects. In forward bias, steplike current-voltage characteristics are observed and ascribed to tunneling from one-dimensional subbands in the emitter contacts through OD states in the well, accompanied by Coulomb charging effects. A moderate magnetic field (B almost-equal-to 4 T) parallel to the current improves the flatness of the plateaus.
This is a Submitted version This version's date is: 15/6/1992 This item is not peer reviewed
https://repository.royalholloway.ac.uk/items/85015a84-58de-926b-e1f1-abc5442e8738/8/
Deposited by Research Information System (atira) on 18-Nov-2014 in Royal Holloway Research Online.Last modified on 18-Nov-2014